| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
IXYS |
Power MOSFET • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - low |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFET q 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Eas |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFET Conditions TVJ = 25°C Maximum Ratings 800 V • Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A • 3rd generation CoolMOS™ 1) power |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFET l 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 ... 65 / 2.4 ...11 N/lb 3 g l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 25 |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFET • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFET • fast CoolMOS™ 1) power MOSFET 3rd generation - high blocking voltage - low on resistance - low thermal resistance due to reduced chip thickness • Series Schottky diode prevents current flow through MOSFET’s body diode - very low for |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFET ● RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 4 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 640 V; ID = 70 A miniBLOC package - Electrically is |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFET ● RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 5 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 100 A 0.05 mA mA ● miniBLOC package - |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFET J mJ q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 70 mΩ 3.5 60 5.5 V q ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFET ISO264 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped induct |
|
|
|
|
IXYS Corporation |
CoolMOS Power MOSFETs J mJ Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 125 2 100 200 166 18 84 25 15 72 6 1 1.3 150 m Ω 4 50 V µA µA nA nC nC nC ns ns ns ns V • ISOPLUS247 package with DCB Base - Electrical isolatio |
|
|
|
|
IXYS |
Power MOSFET • fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applicatio |
|
|
|
|
IXYS |
Power MOSFET • fast COOLMOS® * power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications |
|
|
|
|
IXYS |
CoolMOS Power MOSFET • fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applicatio |
|
|
|
|
IXYS |
CoolMOS Power MOSFET • fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applicatio |
|
|
|
|
IXYS |
CoolMOS Power MOSFET • fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications |
|
|
|
|
IXYS |
CoolMOS Power MOSFET • Fast CoolMOS power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) • Fully isolated package Applications • Switched mode power supplies (SMPS) • Uninterruptible power |
|
|
|
|
IXYS |
Power MOSFET Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMos power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped induct |
|
|
|
|
IXYS |
Power MOSFET • fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applicatio |
|
|
|
|
IXYS |
Power MOSFET • fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications |
|
Desde 2024. D4U Semiconductor.
|