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IXKC25N80C |
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| Part Number | IXKC25N80C |
| Manufacturer | IXYS |
| Description | www.DataSheet4U.com Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol VDSS VGS VGSM ID25 ID90 ID(RMS... |
| Features |
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMos power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(<30pF)
z
11 ... 65 / 2.4 ...11 N/lb 3 g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 136 280 2 TJ = 25°C TJ = 125°C 10 ±200 150 mΩ mΩ 4 50 V µA µA nA
Applications Switched Mode Power S... |
| Document |
 IXKC25N80C Data Sheet
PDF 581.17KB |
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Desde 2024. D4U Semiconductor.
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