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IXKR25N80C |
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| Part Number | IXKR25N80C |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information www.DataSheet4U.com CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base G VDSS ... |
| Features |
J mJ
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 125 2 100 200 166 18 84 25 15 72 6 1 1.3 150 m Ω 4 50 V µA µA nA nC nC nC ns ns ns ns V
• ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO247AD compatible - Easy clip assembly • fast CoolMOS power MOSFET - 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switchin... |
| Document |
 IXKR25N80C Data Sheet
PDF 67.14KB |
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