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| Part Number | IXKC19N60C5 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IXKC19N60C5 |
| Manufacturer | IXYS |
| Title | Power MOSFET |
| Description | Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge D G S ID25 = 19 A VDSS = 600 V RDS(on) max = 0.125 Ω ISOPLUS220TM G D S E72873 q. |
| Features |
• Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power. |
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Desde 2024. D4U Semiconductor.
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