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IXKC13N80C |
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| Part Number | IXKC13N80C |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D G S ID25 = 13 ... |
| Features |
Conditions TVJ = 25°C
Maximum Ratings 800 V
• Silicon chip on Direct-Copper-Bond substrate - high power dissipation ± 20 V - isolated mounting surface TC = 25°C TC = 90°C - 2500 V electrical isolation 13 A • 3rd generation CoolMOS™ 1) power 9 A MOSFET TJ start = 25°C; single pulse; ID = 3.4 A 670 mJ - high blocking capability TJ start = 25°C; repetitive; ID = 17 A 0.5 mJ - lowest resistance VDS < VDSS; IF = 17 A; TVJ = 150°C dIR /dt = 100 A/µs 6 V/ns t Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID90 u VDS = V... |
| Document |
 IXKC13N80C Data Sheet
PDF 440.47KB |
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Desde 2024. D4U Semiconductor.
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