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IXKC23N60C5 |
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| Part Number | IXKC23N60C5 |
| Manufacturer | IXYS |
| Description | IXKC 23N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge Preliminary data D ... |
| Features |
• Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter Advantages ... |
| Document |
 IXKC23N60C5 Data Sheet
PDF 303.84KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IXKC23N60C5 |
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Desde 2024. D4U Semiconductor.
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