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IXKG25N80C |
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| Part Number | IXKG25N80C |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET VDSS = 8... |
| Features |
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(<40pF)
z
1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting torque
300 2500 0.9 / 6 8
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 126 297 2 TJ = 2... |
| Document |
 IXKG25N80C Data Sheet
PDF 525.98KB |
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