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IXYS Corporation |
Ultra-Low VCE(sat) IGBT • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor spe |
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IXYS Corporation |
HiPerFET Power MOSFETs l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifie |
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IXYS Corporation |
IGBT q International standard package SOT-227B q Aluminium nitride isolation - high power dissipation q Isolation voltage 3000 V~ q Very high current, fast switching IGBT q Low V for minimum on-state CE(sat) conduction losses q MOS Gate turn-on drive simp |
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IXYS Corporation |
Ultra-Low VCE(sat) IGBT • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor spe |
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IXYS |
IGBT z Very high frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity Applications z PFC circuits z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed co |
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IXYS Corporation |
HiPerFASTTM IGBT C2-Class High Speed IGBTs z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn |
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IXYS Corporation |
HiPerFET MOSFET ISOPLUS220TM l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) l Rugged polysilicon gate cell structure l Unclamped Inductive Switc |
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IXYS Corporation |
Lightspeed 2TM Series z z z z z C = Collector W °C °C °C V g °C DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications z z 50/60 Hz RMS, t = 1m 2500 |
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IXYS Corporation |
LowV-CE(sat) IGBT • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low collector to tab capacitance (<25pF) • Rugged polysilicon gate cell structure • Fast intrinsic Rectifier • Low VCE( |
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IXYS Corporation |
NPT3 IGBT • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • ISOPLUS 247TM package - isolated back surface - low coupling capacity |
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IXYS |
Power MOSFET z z z z z High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μ |
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IXYS Corporation |
Power MOSFET Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42 |
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IXYS |
High Power Sonic FRD |
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IXYS |
High Power Sonic FRD |
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IXYS Corporation |
HiPerFET Power MOSFETs Q-Class • Low gate charge • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages |
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IXYS Corporation |
HiPerFET Power MOSFETs Q-Class • Low gate charge • International standard packages • Epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche energy and current rated • Fast intrinsic Rectifier Advantages |
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IXYS Corporation |
HiPerFET Power MOSFETs Q-Class z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±20 |
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IXYS Corporation |
HiPerFET Power MOSFET • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 N |
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IXYS Corporation |
(IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT |
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IXYS Corporation |
HiPerFASTTM IGBT C2-Class High Speed IGBTs z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn |
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Desde 2024. D4U Semiconductor.
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