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IXGR60N60U1 |
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| Part Number | IXGR60N60U1 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol VCES VCGR VGES ... |
| Features |
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low collector to tab capacitance (<25pF) • Rugged polysilicon gate cell structure • Fast intrinsic Rectifier • Low VCE(sat) IGBT and standard diode for minimum on-state conduction losses • MOS Gate turn-on for drive simplicity Applications • Solid state relays • Capacitor discharge circuits • High power ignition circuits Advantages • Space savings (two devices in one package) • Reduces assembly time and cost • High power density C = Collector, TAB = Collector SSOA... |
| Document |
 IXGR60N60U1 Data Sheet
PDF 141.23KB |
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Desde 2024. D4U Semiconductor.
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