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IXFN60N60 |
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| Part Number | IXFN60N60 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md... |
| Features |
• International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2 4.5 ±200 TJ = 25°C TJ = 125°C 100 2 75 V V nA mA mA mW • • • • Battery chargers Switched-mode and resonant-mode power suppl... |
| Document |
 IXFN60N60 Data Sheet
PDF 71.37KB |
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Desde 2024. D4U Semiconductor.
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