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IXTP60N20T |
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| Part Number | IXTP60N20T |
| Manufacturer | IXYS |
| Description | TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (I... |
| Features |
z z z z z
High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on)
Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 0.5 • ID25, Note 1 32 Characteristic Values Min. Typ. Max. 200 3.0 5.0 V V z z z Easy to Mount Space Savings High Power Density Applications z z z ±200 nA 1 μA 250 μA 40 mΩ z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power S... |
| Document |
 IXTP60N20T Data Sheet
PDF 162.02KB |
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Desde 2024. D4U Semiconductor.
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