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IXFH60N20 |
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| Part Number | IXFH60N20 |
| Manufacturer | IXYS Corporation |
| Description | ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXFH 60N20 IXFT 60N20 VDSS = 200 V = 60 A ID25 RDS(on) = 33 mΩ trr ≤ 250 ns Symbol VDS... |
| Features |
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International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 25 1 33 V V nA µA mA mΩ
Advantages
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VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2001 IXYS ... |
| Document |
 IXFH60N20 Data Sheet
PDF 112.24KB |
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Desde 2024. D4U Semiconductor.
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