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60N60 |
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| Part Number | 60N60 |
| Manufacturer | IXYS Corporation |
| Description | Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM I C25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C ... |
| Features |
q International standard package SOT-227B
q Aluminium nitride isolation - high power dissipation
q Isolation voltage 3000 V~ q Very high current, fast switching
IGBT q Low V for minimum on-state
CE(sat)
conduction losses q MOS Gate turn-on drive simplicity q Low collector-to-case capacitance
(< 50 pF) q Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
BV CES
VGE(th) ICES
IGES VCE(sat)
Test Conditions
I
C
=
250
mA,
V GE
=
0
V
IC = 250 mA, VCE = VGE
VCE = 0.8 • VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless... |
| Document |
 60N60 Data Sheet
PDF 65.83KB |
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