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Inchange Semiconductor |
Silicon NPN Power Transistor stor BU105 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 750 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistor = 50mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 400V; IE=0 I |
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Inchange Semiconductor |
Silicon NPN Power Transistor ERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; |
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Inchange Semiconductor |
Silicon NPN Power Transistor TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB |
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Inchange Semiconductor |
Silicon NPN Power Transistor d trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC |
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Inchange Semiconductor |
Silicon NPN Power Transistor MBOL PARAMETER CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 550V; VBE= -5V hFE DC Current Gain IC= 6A; VCE= 2V fT Cur |
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Inchange Semiconductor |
Silicon NPN Power Transistor CONDITIONS V(BR)EBO Collector-Base Breakdown Voltage IE= 30mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A ICEX Collector Cutoff Current VCE= 250V; VBE= -5V VCE= 700V; VBE= -5V hFE DC Current Gain IC= 8A; VCE= 2V fT |
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Inchange Semiconductor |
Silicon NPN Power Transistors O(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A VBE(sat) B |
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Inchange Semiconductor |
Silicon NPN Power Transistor VCBO Collector-Base Sustaining Voltage IC=1mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 4V ICEO Collect |
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Inchange Semiconductor |
Silicon NPN Power Transistor 1 Collector-Emitter Saturation Voltage IC= 0.2A; IB= 20mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.2A; VCE= 10V COB Collector Output Capacitance IE= 0; VCB= 10V; f= |
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INCHANGE Semiconductor |
Silicon NPN Darlington Power Transistor B=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 20mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 ICBO Collector Cutoff Current VCB= 320V;IE= 0 IEBO Emitter Cutoff C |
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INCHANGE Semiconductor |
isc Silicon NPN Darlington Power Transistor IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 20mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 ICBO Collector Cutoff Current VCB= 400V;IE= 0 IEBO Emitter Cutoff |
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Desde 2024. D4U Semiconductor.
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