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Silicon NPN Power Transistor e IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICES Collector Cutoff Current VCE= 60V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE |
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Silicon NPN Power Transistor Emitter On Voltage IC= 3A; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICES Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 60V; VBE= 0 VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 4V hFE-2 DC Current Gain Switchin |
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INCHANGE |
NPN Transistor er Saturation Voltage IC= 3A; IB= 0.375A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICES Collector Cutoff Current VCE= 60V; VBE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Cur |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤850mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·LED lighting ·ABSOLUTE MAXIMUM RATINGS(Ta=2 |
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Silicon NPN Power Transistor |
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INCHANGE |
NPN Transistor Emitter On Voltage IC= 1A; IB= 0.2A IC= 1A; VCE= 10V ICEO Collector Cutoff Current VCE= 150V; IB= 0 ICES Collector Cutoff Current VCE= 350V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.3A; VCE= 10V hFE- |
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INCHANGE |
Silicon NPN Power Transistor Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB= 0 ICES Collector Cutoff Current VCE= 60V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current |
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INCHANGE |
NPN Transistor r Saturation Voltage IC= 1A; IB= 0.125A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 1V ICEO Collector Cutoff Current VCE= 60V; IB= 0 ICES Collector Cutoff Current VCE= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Curre |
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Desde 2024. D4U Semiconductor.
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