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D858 |
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| Part Number | D858 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATIN... |
| Features |
Emitter On Voltage
IC= 3A; VCE= 4V
ICEO Collector Cutoff Current
VCE= 30V; IB= 0
ICES Collector Cutoff Current IEBO Emitter Cutoff Current
VCE= 60V; VBE= 0 VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
Switching Times
IC= 3A; VCE= 4V
ton Turn-On Time toff Turn-Off Time
IC= 6A; IB1= -IB2= 0.6A
MIN TYP. MAX UNIT 60 V
1.5 V 1.6 V 700 μA 400 μA 1 mA 40 250 20
0.2 μs 1.4 μs
hFE-1 Classifications RQP
40-90 70-150 120-250
isc website：www.iscsemi.cn
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| Document |
 D858 Data Sheet
PDF 127.78KB |
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Desde 2024. D4U Semiconductor.
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