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2SD855 |
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| Part Number | 2SD855 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB760 ·Minimum Lot-to-Lot variations for robust device performance a... |
| Features |
r Saturation Voltage IC= 1A; IB= 0.125A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 1V
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
ICES
Collector Cutoff Current
VCE= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A; VCE= 4V
hFE-2
DC Current Gain
IC= 1A; VCE= 4V
MIN TYP. MAX UNIT
60
V
1.0
V
1.3
V
300 μA
200 μA
1
mA
40
450
15
hFE-1 Classifications R Q P O 40-90 70-150 120-250 200-450 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co... |
| Document |
 2SD855 Data Sheet
PDF 208.65KB |
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