Busque con el número de pieza junto con el fabricante o la descripción
2SD857 |
Click to view a larger image
| Part Number | 2SD857 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB762 ·Minimum Lot-to-Lot variations for robust device performance a... |
| Features |
Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
ICES
Collector Cutoff Current
VCE= 60V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 4A; IB1= IB2= 0.4A
2SD857
MIN TYP. MAX UNIT
60
V
1.5
V
2.0
V
700 μA
400 μA
1
mA
40
250
15
0.2
μs
1.4
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time witho... |
| Document |
 2SD857 Data Sheet
PDF 208.34KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|