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2SD859 |
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| Part Number | 2SD859 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designe... |
| Features |
Emitter On Voltage
IC= 1A; IB= 0.2A IC= 1A; VCE= 10V
ICEO
Collector Cutoff Current
VCE= 150V; IB= 0
ICES
Collector Cutoff Current
VCE= 350V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 10V
hFE-2
DC Current Gain
IC= 1A; VCE= 10V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 1A; IB1= IB2= 0.1A
hFE-1 Classifications R Q P 40-90 70-150 120-250 2SD859 MIN TYP. MAX UNIT 250 V 1.0 V 1.5 V 1 mA 1 mA 1 mA 40 250 10 0.2 μs 2.0 μs NOTICE： ISC reserves the rights to make changes of the content herein th... |
| Document |
 2SD859 Data Sheet
PDF 208.18KB |
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Desde 2024. D4U Semiconductor.
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