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2SD858 |
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| Part Number | 2SD858 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
e IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
ICES
Collector Cutoff Current
VCE= 60V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 6A; IB1= IB2= 0.6A
hFE-1 Classifications R Q P 40-90 70-150 120-250 2SD858 MIN TYP. MAX UNIT 60 V 1.5 V 1.6 V 700 μA 400 μA 1 mA 40 250 20 0.2 μs 1.4 μs NOTICE： ISC reserves the rights to make changes of the content... |
| Document |
 2SD858 Data Sheet
PDF 217.17KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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