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INCHANGE |
Silicon NPN Power Transistor V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A I |
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Inchange Semiconductor |
Power Transistor 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC |
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Inchange Semiconductor |
Silicon NPN Transistor BO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 10V;f= |
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Inchange Semiconductor |
Silicon NPN RF Transistor BO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S |
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INCHANGE |
NPN Transistor V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A I |
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INCHANGE |
NPN Transistor CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Curre |
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Inchange Semiconductor |
Silicon NPN RF Transistor .1 uA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 uA hFE DC Current Gain IC= 20mA; VCE= 10V 50 150 250 fT Current-Gain—Bandwidth Product VCE=10V,IC=20mA,f=1GHz 6.5 GHz Cre Output Capacitance VCB=10V,IE=0mA,f=1MHz 0.65 pF | S21 |
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Inchange Semiconductor |
2SC3371 SC3371 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH 500 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.0 V Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1 |
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INCHANGE |
NPN Transistor ) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 300mA ; VCE= 1V VCB= 45V; IE= 0 ICEO Collector Cutoff Current VCE= 40V; IB= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC=100mA ; VCE= 1V fT Current-Gain— |
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INCHANGE |
NPN Transistor mitter Saturation Voltage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 1V hFE-2 DC |
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Inchange Semiconductor |
Power Transistor ARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800 |
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INCHANGE |
NPN Transistor tter Saturation Voltage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB=60V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 1V hFE-2 DC Gur |
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INCHANGE |
NPN Transistor tage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 2A; IB= 0.4A VCB= 500V ; |
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INCHANGE |
NPN Transistor BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO C |
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INCHANGE |
NPN Transistor )CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Colle |
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NPN Transistor PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA; IB= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1. |
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INCHANGE |
NPN Transistor oltage IC= 0.2A; RBE= ∞; L= 100mH 400 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 10A; IB1= 2A; IB2= -0.6A; VBE= -5V; L= 180μH; Clamped 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat) Collector-Emitter |
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Inchange Semiconductor |
Silicon NPN Power Transistor oltage IC= 100uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100uA; IC= 0 ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE1 DC |
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INCHANGE |
Silicon NPN Power Transistor reakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A ICBO Collector Cutoff Curr |
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INCHANGE |
NPN Transistor ector-Emitter Sustaining Voltage IC= 20mA; IB=0 400 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 15A; IB1= 3A; IB2= -1A; VBE= -5V; L= 180μH; Clamped 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat) Colle |
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Desde 2024. D4U Semiconductor.
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