Busque con el número de pieza junto con el fabricante o la descripción
2SC3309 |
Click to view a larger image
| Part Number | 2SC3309 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regu... |
| Features |
BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 0.8A; IB1= -IB2= 0.08A RL= 250Ω;VCC≈200V PW=20μs;Duty Cycle≤1%
2SC3309
MIN TYP. MAX UNIT
400
V
500
V... |
| Document |
 2SC3309 Data Sheet
PDF 192.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|
| 6 | 2SC3303 |
Toshiba Semiconductor |
SILICON NPN TRANSISTOR |
|
| 7 | 2SC3303 |
GME |
Silicon NPN Transistor |
|
| 8 | 2SC3303 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | 2SC3306 |
Toshiba Semiconductor |
NPN Transistor |
|
| 10 | 2SC3306 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|