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2SC3301 |
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| Part Number | 2SC3301 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | : SILICON NPN EPITAXIAL PLANAR TYPE 2SC3301 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=2.3dB, lS21el 2=9dB (f=1000MHz) 4.6 MAX, 1.7 MAX . Unit in mm 1.6 MAX. Q4±Q05 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 15 UNIT +ao8 a45-ao5 -i-ao8 a.4-ao5 1.5 ±ai M. |
| Features | . NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=2.3dB, lS21el 2=9dB (f=1000MHz) 4.6 MAX, 1.7 MAX . Unit in mm 1.6 MAX. Q4±Q05 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 15 UNIT +ao8 a45-ao5 -i-ao8 a.4-ao5 1.5 ±ai M- + 0.08 Q4-Q05 1.5±ai Collector-Emitter Voltage VcEO 7.5 Emitter-Base Voltage Base Current VEBO IB 40 mA Collector Current IC 80 mA Collector Power Dissipation PC 300 mW Collector Power Dissipation PC 800 mW Junction Temperature 125 Storage Temperature Range Tstg -55-125 PC % : When mounted cermic substrate of 250m. |
| Datasheet |
 2SC3301 Data Sheet
PDF 134.34KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SC3303 |
Toshiba Semiconductor |
SILICON NPN TRANSISTOR |
|
| 6 | 2SC3303 |
GME |
Silicon NPN Transistor |
|
| 7 | 2SC3303 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 8 | 2SC3306 |
Toshiba Semiconductor |
NPN Transistor |
|
| 9 | 2SC3306 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC3306 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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