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2SC3301 Silicon NPN Transistor Datasheet


2SC3301

Toshiba
2SC3301

Part Number 2SC3301
Manufacturer Toshiba (https://www.toshiba.com/)
Description : SILICON NPN EPITAXIAL PLANAR TYPE 2SC3301 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=...
Features . NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=2.3dB, lS21el 2=9dB (f=1000MHz) 4.6 MAX, 1.7 MAX . Unit in mm 1.6 MAX. Q4±Q05 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 15 UNIT +ao8 a45-ao5 -i-ao8 a.4-ao5 1.5 ±ai M- + 0.08 Q4-Q05 1.5±ai Collector-Emitter ...

Document Datasheet 2SC3301 datasheet pdf (134.34KB)



2SC3309

Toshiba
2SC3309
Part Number 2SC3309
Manufacturer Toshiba
Title Silicon NPN Transistor
Description — SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED D.
Features . Excellent Switching Times t r =1.0/ts(Max.), tf=1.0)Us(Max.) at Ic=0.8A . High Collector Breakdown Voltage : VcEO= ^00V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 500 UNIT 7.0 0Z.Z-LO.Z —r i / A—?m °. A* CO at C5 X< H o 2 to H I 1 L4 + C12.

Document 2SC3309 datasheet pdf


2SC3309

INCHANGE
2SC3309
Part Number 2SC3309
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performan.
Features BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO E.

Document 2SC3309 datasheet pdf


2SC3309

SavantIC
2SC3309
Part Number 2SC3309
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulators and high voltage switching .
Features down voltage Collector -base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IE=1mA; IE=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=400V; IE=0 VEB=7V; IC=0 IC=0.1.

Document 2SC3309 datasheet pdf


2SC3308

Toshiba
2SC3308
Part Number 2SC3308
Manufacturer Toshiba
Title SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description :A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : vCE(sat)=0.4V(Max..
Features . Low Collector Saturation Voltage : vCE(sat)=0.4V(Max.) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . Complementary to 2SA1308. INDUSTRIAL APPLICATIONS Unit in mm 1H3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base .

Document 2SC3308 datasheet pdf


2SC3307

INCHANGE
2SC3307
Part Number 2SC3307
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performanc.
Features CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 5A; IB= 1A VCB= 800V ; IE= 0 IEBO Emitte.

Document 2SC3307 datasheet pdf



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