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| Part Number | 2SC3356 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for... |
| Features |
BO
Emitter Cutoff Current
VEB= 1V; IC= 0
hFE
DC Current Gain
IC= 20mA ; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V
Cre
Feed-Back Capacitance
︱S21e︱2 Insertion Power Gain
IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 10V;f= 1.0GHz
NF
Noise Figure
IC= 7mA ; VCE= 10V;f= 1.0GHz
MIN TYP. MAX UNIT
1.0 μA
1.0 μA
50
300
7
GHz
0.55 1.0 pF
11.5
dB
1.1 2.0 dB
hFE Classification Class Q R S Marking R23 R24 R25 hFE 50-100 80-160 125-250 isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC3356 isc webs... |
| Document |
 2SC3356 Data Sheet
PDF 399.63KB |
Desde 2024. D4U Semiconductor.
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