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2SC3310 |
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| Part Number | 2SC3310 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regu... |
| Features |
)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 3A ; VCE= 5V
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
Switching times
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 0.4A RL= 50Ω;VCC≈200V PW=20μs;Duty Cycle≤1%
2SC3310
MIN TYP. MAX UNIT
400
V
500
V
1.0
V
1.5
V... |
| Document |
 2SC3310 Data Sheet
PDF 192.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3310 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC3310 |
Toshiba |
Silicon NPN Transistor |
|
| 3 | 2SC3311 |
Panasonic |
Silicon NPN Transistor |
|
| 4 | 2SC3311A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3312 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3313 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3314 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC3315 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3317 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC3317 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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