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2SC3310 |
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| Part Number | 2SC3310 |
| Manufacturer | SavantIC |
| Description | ·With TO-220Fa package ·High collector breakdown voltage ·Excellent Switching times APPLICATIONS ·Switching regulator ·High speed DC-DC converter ·High voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base. |
| Features | emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=1mA ;IE=0 IC=10mA ;IB=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=400V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=5A ; VCE=5V 12 8 MIN 500 400 1.0 1.5 100 1 TYP. MAX UNIT V V V V µA mA SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Switching times Tr ts tf Rise time Storage time Fall time IC=4A ;IB1=-IB2=0.4A VCC<200V;RL=10> 1.0 2.5 1.0 µs µs µs 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistor. |
| Datasheet |
 2SC3310 Data Sheet
PDF 201.16KB |
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2SC3310 |
| Part Number | 2SC3310 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE M. |
| Features | )CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 3A ; VCE= 5V hFE-2 DC Current Gain . |
2SC3310 |
| Part Number | 2SC3310 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : 2SC3310 i SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Excellent Switching Times : t r =1.0>us(Max.), tf=1.0/t"s(Max. ) at Ic=4A . High Collector Breakdown Voltage : VcEO=400V MAXIMUM RATINGS (Ta. |
| Features | . Excellent Switching Times : t r =1.0>us(Max.), tf=1.0/t"s(Max. ) at Ic=4A . High Collector Breakdown Voltage : VcEO=400V MAXIMUM RATINGS (Ta=25°c> CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation Ta=25 C Tc=25 C SYMBOL VCBO VCEO VEBO ic ICP IB PC RATING 500 400 2.0 30 UNIT INDUSTR. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3311 |
Panasonic |
Silicon NPN Transistor |
|
| 2 | 2SC3311A |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 3 | 2SC3312 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3313 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3314 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3315 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3317 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC3317 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3318 |
Fuji Electric |
Transistor |
|
| 10 | 2SC3318 |
SavantIC |
SILICON POWER TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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