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2SC3376 |
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| Part Number | 2SC3376 |
| Manufacturer | INCHANGE |
| Description | · ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching ... |
| Features |
reakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.8A; IB= 0.16A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 0.8A; VCE= 5V
Switching Times; Resistive Load
tr
Rise Time
ts
Storage Time
tf
Fall Time
IB1= 0.08A; IB2= -0.2A; VCC≈ 400V; RL= 500Ω
MIN TYP. MAX UNIT
800
V
900
V
0.6
V
1.2
V
0.1 mA
1.0 mA
10
1.0 μs 4.0 μs 1.0 μs
Notice： ISC reserves ... |
| Document |
 2SC3376 Data Sheet
PDF 197.74KB |
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Desde 2024. D4U Semiconductor.
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