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| Part Number | 2SC3376 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC3376 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | · ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLU. |
| Features | reakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 0.8A; VCE= 5V Switching Times; Resistive Load tr Ris. |
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Desde 2024. D4U Semiconductor.
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