2SC3303 |
Part Number | 2SC3303 |
Manufacturer | Inchange Semiconductor |
Description | ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
Features |
oltage IC= 100uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE1
DC Current Gain
IC= 1A; VCE= 1V
hFE2
DC Current Gain
IC= 3A; VCE= 1V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 4V
hFE1 Classifications O Y 70-140 120-240 2SC3303 MIN TYP. MAX UNIT 0.4 V 1.2 V 100 V 80 V 7 V 1 uA 1 uA 70 240 40 80 pF 20 MHz isc website:www.is... |
Document |
2SC3303 Data Sheet
PDF 218.43KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3300 |
INCHANGE |
NPN Transistor | |
2 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SC3301 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
5 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor | |
6 | 2SC3303 |
Toshiba Semiconductor |
SILICON NPN TRANSISTOR |