| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150oC • Typ. RDS(on) = 57.5 mΩ • Ultra Low Gate Charge (Typ. Qg = 240 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Descrip |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 226 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 1278 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 285 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 735 pF) • 100% Avalanche Tested • An Integrated Gate Resistor • RoHS Compliant Applications • LCD / LED / PDP |
|
|
|
|
Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.062Ω • Fast Recovery Type ( trr = 240ns) • Ultra Low Gate Charge (typ. Qg = 210nC) • Low Effective Output Capacitance (typ. Cosseff. = 420pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s pr |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 277 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’ |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 96 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 58 mΩ • Ultra Low Gate Charge (Typ. Qg = 210 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Solar Inverter • AC-DC Power Supply December |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650V @TJ = 150 C • RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A • Ultra Low Gate Charge ( Typ.Qg =115nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant o December 2011 TM Description The SupreMOS MOSFET, Fairchild’ |
|
|
|
|
Fairchild Semiconductor |
N-Channel SuperFET II Easy-Drive MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 102 mΩ • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 258 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 112 m • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P |
|
|
|
|
Fairchild Semiconductor |
N-Channel SuperFET II Easy-Drive MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 132 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Pow |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 98 mΩ • Ultra Low Gate Charge (Typ. Qg = 107 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’ |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @ TJ = 150°C • Typ. RDS(on) = 37 mΩ • Ultra Low Gate Charge (Typ. Qg = 163 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P |
|
|
|
|
Fairchild Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.15Ω • Ultra low gate charge (typ. Qg = 75nC) • Low effective output capacitance (typ. Coss.eff = 165pF) • 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high volt |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 650 V @ TJ = 150°C • Typ.RDS(on) = 79 mΩ • Ultra Low Gate Charge ( Typ. Qg = 139 nC ) • Low Effective Output Capacitance (Typ. Coss.eff = 340 pF) • 100% Avalanche Tested Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation o |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 168 mΩ • Ultra Low Gate Charge (Typ. Qg = 60 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power |
|
|
|
|
Fairchild Semiconductor |
MOSFET Typical RDS(on) = 68 mΩ at VGS = 10 V, ID = 27 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 27 A UIS Capability Qualified to AEC Q101 RoHS Compliant Description G D S D G TO-247 S SuperFET® II MOSFET is Fairchild Semiconductor’s brand |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 700 V @ TJ = 150°C • Typ. RDS(on) = 68 mΩ • Ultra Low Gate Charge (Typ. Qg = 126 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 693 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power |
|
|
|
|
Fairchild Semiconductor |
MOSFET • 650 V @TJ = 150°C • Typ. RDS(on) = 150 m • Ultra Low Gate Charge (Typ. Qg = 42 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 190 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial P |
|
|
|
|
Fairchild Semiconductor |
MOSFET • RDS(on) = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A • Ultra Low Gate Charge (Typ. Qg = 218 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF) • 100% Avalanche Tested • RoHS Compliant Application • Solar Inverter • AC-DC Power Supply Desc |
|
Desde 2024. D4U Semiconductor.
|