FCH165N60E Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

FCH165N60E N-Channel SuperFET II Easy-Drive MOSFET

FCH165N60E

FCH165N60E
FCH165N60E FCH165N60E
zoom Click to view a larger image
Part Number FCH165N60E
Manufacturer Fairchild Semiconductor
Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Cons.
Features
• 650 V @TJ = 150°C
• Typ. RDS(on) = 132 mΩ
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF)
• 100% Avalanche Tested
• RoHS Compliant Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rat.
Datasheet Datasheet FCH165N60E Data Sheet
PDF 683.98KB
Distributor Stock Price Buy

FCH165N60E

ON Semiconductor
FCH165N60E
Part Number FCH165N60E
Manufacturer ON Semiconductor
Title N-Channel MOSFET
Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfo.
Features
• Typ. RDS(on) = 132 mW
• 650 V @ TJ = 150°C
• Ultra Low Gate Charge (Typ. Qg = 57 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 204 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• Telecom / Sever Power Supplies
• Industrial Power Supplies www.onsemi.com VDS 600 V RDS(ON) MAX 165 mW @ 10 V ID MAX 23 A D G S N-CHANNEL MOSFET SD G TO−2.


similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 FCH165N65S3R0
ON Semiconductor
N-Channel MOSFET Datasheet
2 FCH104N60
Fairchild Semiconductor
N-Channel MOSFET Datasheet
3 FCH104N60
INCHANGE
N-Channel MOSFET Datasheet
4 FCH104N60F
Fairchild Semiconductor
MOSFET Datasheet
5 FCH104N60F-F085
ON Semiconductor
N-Channel MOSFET Datasheet
6 FCH10A03L
Kyocera
Schottky Barrier Diode Datasheet
7 FCH10A03L
Nihon Inter Electronics
Schottky Barrier Diode Datasheet
8 FCH10A04
Nihon Inter Electronics
Schottky Barrier Diode Datasheet
9 FCH10A045
Thinki Semiconductor
Dual Common Cathode Schottky Barrier Rectifier Datasheet
10 FCH10A06
Nihon Inter Electronics Corporation
Schottky Barrier Diode Datasheet
More datasheet from Fairchild Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad