FCH165N60E |
Part Number | FCH165N60E |
Manufacturer | Fairchild Semiconductor |
Description | SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Cons. |
Features |
• 650 V @TJ = 150°C • Typ. RDS(on) = 132 mΩ • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff) = 204 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rat. |
Datasheet |
FCH165N60E Data Sheet
PDF 683.98KB |
Distributor | Stock | Price | Buy |
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FCH165N60E |
Part Number | FCH165N60E |
Manufacturer | ON Semiconductor |
Title | N-Channel MOSFET |
Description | SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfo. |
Features |
• Typ. RDS(on) = 132 mW • 650 V @ TJ = 150°C • Ultra Low Gate Charge (Typ. Qg = 57 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 204 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies www.onsemi.com VDS 600 V RDS(ON) MAX 165 mW @ 10 V ID MAX 23 A D G S N-CHANNEL MOSFET SD G TO−2. |
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