Busque con el número de pieza junto con el fabricante o la descripción
FCH35N60 |
Click to view a larger image
| Part Number | FCH35N60 |
| Manufacturer | Fairchild Semiconductor |
| Description | SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche ener. |
| Features |
• 650 V @ TJ = 150°C • Typ.RDS(on) = 79 mΩ • Ultra Low Gate Charge ( Typ. Qg = 139 nC ) • Low Effective Output Capacitance (Typ. Coss.eff = 340 pF) • 100% Avalanche Tested Description SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for . |
| Datasheet |
 FCH35N60 Data Sheet
PDF 408.06KB |
| Distributor | Stock | Price | Buy |
|---|
FCH35N60 |
| Part Number | FCH35N60 |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | SUPERFET MOSFET is ON Semiconductor’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchin. |
| Features |
• 650 V @ TJ = 150°C • Typ. RDS(on) = 79 mW • Ultra Low Gate Charge (Typ. Qg = 139 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 340 pF) • 100% Avalanche Tested • This is a Pb−Free Device Applications • Solar Inverter • AC−DC Power Supply www.onsemi.com VDS 600 V RDS(ON) MAX 98 mW @ 10 V D ID MAX 35 A G S N-CHANNEL MOSFET G DS TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 35. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FCH30A03L |
Kyocera |
Schottky Barrier Diode |
|
| 2 | FCH30A03L |
Nihon Inter Electronics |
SBD |
|
| 3 | FCH30A04 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 4 | FCH30A06 |
Kyocera |
Schottky Barrier Diode |
|
| 5 | FCH30A06 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 6 | FCH30A09 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 7 | FCH30A10 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 8 | FCH30A10 |
Kyocera |
Schottky Barrier Diode |
|
| 9 | FCH30A15 |
Kyocera |
Schottky Barrier Diode |
|
| 10 | FCH30A15 |
Nihon Inter Electronics |
SBD |
|
Desde 2024. D4U Semiconductor.
|