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FCH130N60 |
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| Part Number | FCH130N60 |
| Manufacturer | Fairchild Semiconductor |
| Description | SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate an. |
| Features |
• 650 V @ TJ = 150°C • Typ. RDS(on) = 112 m • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies • AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior . |
| Datasheet |
 FCH130N60 Data Sheet
PDF 567.41KB |
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FCH130N60 |
| Part Number | FCH130N60 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor FCH130N60 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 130mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Pow. |
| Features |
·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 130mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Sourc. |
FCH130N60 |
| Part Number | FCH130N60 |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | SUPERFET® II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc. |
| Features |
• 650 V @ TJ = 150°C • Typ. RDS(on) = 112 mW • Ultra Low Gate Charge (Typ. Qg = 54 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF) • 100% Avalanche Tested • This Device is Pb−Free and is RoHS Compliant Applications • Telecom / Server Power Supplies • Industrial Power Supplies • AC−DC Power Supply www.onsemi.com VDSS 600 V RDS(ON) MAX 130 mW ID MAX 28 A D G S N-Channel MOSFE. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FCH104N60 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FCH104N60 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | FCH104N60F |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FCH104N60F-F085 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FCH10A03L |
Kyocera |
Schottky Barrier Diode |
|
| 6 | FCH10A03L |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 7 | FCH10A04 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 8 | FCH10A045 |
Thinki Semiconductor |
Dual Common Cathode Schottky Barrier Rectifier |
|
| 9 | FCH10A06 |
Nihon Inter Electronics Corporation |
Schottky Barrier Diode |
|
| 10 | FCH10A06 |
Thinki Semiconductor |
Dual Common Cathode Schottky Barrier Rectifier |
|
Desde 2024. D4U Semiconductor.
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