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FCH130N60 |
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| Part Number | FCH130N60 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FCH130N60 ·FEATURES ·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 130mΩ@VGS=10V ·100% avalanche tested ·Mi... |
| Features |
·With TO-247 packaging ·Drain Source Voltage- : VDSS ≥ 600V ·Static drain-source on-resistance: RDS(on) ≤ 130mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous;@Tc=25℃ 28 A IDM Drain Current-Single Pulsed 84 A PD Total Dissipation 278 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Tem... |
| Document |
 FCH130N60 Data Sheet
PDF 356.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FCH130N60 |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FCH130N60 |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FCH104N60 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 4 | FCH104N60 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | FCH104N60F |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FCH104N60F-F085 |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FCH10A03L |
Kyocera |
Schottky Barrier Diode |
|
| 8 | FCH10A03L |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 9 | FCH10A04 |
Nihon Inter Electronics |
Schottky Barrier Diode |
|
| 10 | FCH10A045 |
Thinki Semiconductor |
Dual Common Cathode Schottky Barrier Rectifier |
|
Desde 2024. D4U Semiconductor.
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