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FCH47N60N N-Channel MOSFET

FCH47N60N

FCH47N60N
FCH47N60N FCH47N60N
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Part Number FCH47N60N
Manufacturer Fairchild Semiconductor
Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MO.
Features
• 650V @TJ = 150 C
• RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A
• Ultra Low Gate Charge ( Typ.Qg =115nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant o December 2011 TM Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industr.
Datasheet Datasheet FCH47N60N Data Sheet
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FCH47N60N

ON Semiconductor
FCH47N60N
Part Number FCH47N60N
Manufacturer ON Semiconductor
Title N-Channel MOSFET
Description The SUPREMOS MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−resistance, superior s.
Features
• 650 V @ TJ = 150°C
• RDS(on) = 51.5 mW (Typ.) @ VGS = 10 V, ID = 23.5 A
• Ultra Low Gate Charge (Typ. Qg = 115 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 511 pF)
• 100% Avalanche Tested
• This Device is Pb−Free and is RoHS Compliant Applications
• Solar Inverter
• AC−DC Power Supply www.onsemi.com VDS 600 V RDS(ON) MAX 62 mW @ 10 V ID MAX 47 A D G S N-CHANNEL MOSFET G DS TO.


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