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FCH041N60F |
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| Part Number | FCH041N60F |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS . |
| Features |
·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 76 48.1 228 PD Total Dissipation 595 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAM. |
| Datasheet |
 FCH041N60F Data Sheet
PDF 257.07KB |
| Distributor | Stock | Price | Buy |
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FCH041N60F |
| Part Number | FCH041N60F |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel MOSFET |
| Description | SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switchi. |
| Features |
• 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mΩ • Ultra Low Gate Charge (Typ. Qg = 277 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF) • 100% Avalanche Tested • RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gat. |
FCH041N60F |
| Part Number | FCH041N60F |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv. |
| Features |
• 650 V @ TJ = 150°C • Typ. RDS(on) = 36 mW • Ultra Low Gate Charge (Typ. Qg = 277 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF) • 100% Avalanche Tested • This Device is Pb−Free, Halide Free, and is RoHS Compliant Applications • Telecom / Server Power Supplies • Industrial Power Supplies • EV Charger • UPS / Solar DATA SHEET www.onsemi.com VDSS 600 V RDS(ON) MAX 41 mW ID MA. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FCH041N60E |
Fairchild Semiconductor |
MOSFET |
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| 2 | FCH041N60E |
ON Semiconductor |
N-Channel MOSFET |
|
| 3 | FCH041N60F-F085 |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FCH041N65EFLN4 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FCH041N65F |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FCH041N65F |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FCH040N65S3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | FCH040N65S3 |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FCH043N60 |
Fairchild Semiconductor |
MOSFET |
|
| 10 | FCH043N60 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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