| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS Value Unit IB Base Current 500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IE |
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Comset Semiconductors |
Silicon Darlington Power Transistor T64B BDT64C Value Unit IB Base Current -500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maxi |
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Comset Semiconductors |
Silicon Darlington Power Transistor T64B BDT64C Value Unit IB Base Current -500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maxi |
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Comset Semiconductors |
Silicon Darlington Power Transistor 63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IE |
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Comset Semiconductors |
Silicon Darlington Power Transistor 63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IE |
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Comset Semiconductors |
Silicon Darlington Power Transistor T64B BDT64C Value Unit IB Base Current -500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maxi |
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Comset Semiconductors |
Silicon Darlington Power Transistor T64B BDT64C Value Unit IB Base Current -500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maxi |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS Value Unit IB Base Current 500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IE |
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Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDT81 – BDT83 – BDT85 – BDT87 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0A, VCB = 60 V IE=0A, VCB = 80 V IE=0A, VCB = 100 V IE=0A, VCB |
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Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR |4 09/11/2012 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BDT82 – BDT84 – BDT86 – BDT88 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0A, VCB = -60 V IE=0A, VCB = -80 V IE=0A, VCB = |
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Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR |4 09/11/2012 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BDT82 – BDT84 – BDT86 – BDT88 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0A, VCB = -60 V IE=0A, VCB = -80 V IE=0A, VCB = |
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Comset Semiconductors |
Silicon Darlington Power Transistor 63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IE |
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Comset Semiconductors |
Silicon Darlington Power Transistor 63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IE |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS Value Unit IB Base Current 500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IE |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS Value Unit IB Base Current 500 mA PT Power Dissipation @ Tmb < 25° 125 Watts TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IE |
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Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDT81 – BDT83 – BDT85 – BDT87 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0A, VCB = 60 V IE=0A, VCB = 80 V IE=0A, VCB = 100 V IE=0A, VCB |
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Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDT81 – BDT83 – BDT85 – BDT87 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0A, VCB = 60 V IE=0A, VCB = 80 V IE=0A, VCB = 100 V IE=0A, VCB |
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Comset Semiconductors |
(BDT81 - BDT87) SILICON POWER TRANSISTOR Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDT81 – BDT83 – BDT85 – BDT87 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0A, VCB = 60 V IE=0A, VCB = 80 V IE=0A, VCB = 100 V IE=0A, VCB |
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Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR |4 09/11/2012 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BDT82 – BDT84 – BDT86 – BDT88 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0A, VCB = -60 V IE=0A, VCB = -80 V IE=0A, VCB = |
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Comset Semiconductors |
(BDT82 - BDT88) SILICON POWER TRANSISTOR |4 09/11/2012 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BDT82 – BDT84 – BDT86 – BDT88 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0A, VCB = -60 V IE=0A, VCB = -80 V IE=0A, VCB = |
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Desde 2024. D4U Semiconductor.
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