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BDT63B Silicon NPN Darlington Power Transistor

BDT63B

BDT63B
BDT63B BDT63B
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Part Number BDT63B
Manufacturer Inchange Semiconductor
Description ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCE.
Features 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 V(BR)CEO Collector-Emitter Breakdown Voltage BDT63A BDT63B IC= 30mA ;IB=0 BDT63C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V VECF ICEO ICBO IEBO C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IF= 3A VCE=.
Datasheet Datasheet BDT63B Data Sheet
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BDT63B

Comset Semiconductors
BDT63B
Part Number BDT63B
Manufacturer Comset Semiconductors
Title Silicon Darlington Power Transistor
Description SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT6.
Features 63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C Value Unit RthJ-MB From junction to mounting .


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