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BDT63 |
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| Part Number | BDT63 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCE. |
| Features | 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 V(BR)CEO Collector-Emitter Breakdown Voltage BDT63A BDT63B IC= 30mA ;IB=0 BDT63C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V VECF ICEO ICBO IEBO C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IF= 3A VCE=. |
| Datasheet |
 BDT63 Data Sheet
PDF 215.88KB |
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BDT63 |
| Part Number | BDT63 |
| Manufacturer | Comset Semiconductors |
| Title | Silicon Darlington Power Transistor |
| Description | SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT6. |
| Features | 63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C Value Unit RthJ-MB From junction to mounting . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 6 | BDT60A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDT60AF |
INCHANGE |
PNP Transistor |
|
| 8 | BDT60B |
Power Innovations Limited |
PNP Transistor |
|
| 9 | BDT60B |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 10 | BDT60B |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
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