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BDT63 |
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| Part Number | BDT63 |
| Manufacturer | Comset Semiconductors |
| Description | SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages ... |
| Features |
63C
Value
Unit
IB
Base Current
250
mA
PT
Power Dissipation
@ Tmb < 25°
90
W
TJ
Junction Temperature
150 °C -65 to +150
Ts
Storage Temperature range
www.DataSheet.net/
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol Ratings
BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C
Value
Unit
RthJ-MB
From junction to mounting base
1.39
K/W
RthJ-A
From junction to ambient in free air
70
K/W
26/09/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BDT63-A-B-C
ELECTRICAL CH... |
| Document |
 BDT63 Data Sheet
PDF 163.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 6 | BDT60A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDT60AF |
INCHANGE |
PNP Transistor |
|
| 8 | BDT60B |
Power Innovations Limited |
PNP Transistor |
|
| 9 | BDT60B |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 10 | BDT60B |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
|