Busque con el número de pieza junto con el fabricante o la descripción
BDT60AF |
Click to view a larger image
| Part Number | BDT60AF |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF ·Complement to Type BDT61F/61AF/61BF/61CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output . |
| Features | re Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT60F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT60AF BDT60BF IC= -30mA; IB= 0 BDT60CF VCE(sat) VBE(on) ICBO ICEO Collector-Emitter Saturation Voltage IC= -1.5A; IB= -6mA Base-Emitter On Voltage Collector Cutoff Current Collector Cuto. |
| Datasheet |
 BDT60AF Data Sheet
PDF 212.83KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 6 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDT60B |
Power Innovations Limited |
PNP Transistor |
|
| 8 | BDT60B |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 9 | BDT60B |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 10 | BDT60BF |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
|