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BDT60 |
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| Part Number | BDT60 |
| Manufacturer | New Jersey Semi-Conductor |
| Description | . |
| Features | . |
| Datasheet |
 BDT60 Data Sheet
PDF 207.42KB |
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BDT60 |
| Part Number | BDT60 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. |
| Features | CTERISTICS SYMBOL PARAMETER -65~150 MAX Rth j-c Thermal Resistance,Junction to Case 2.5 Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors BDT60/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX U. |
BDT60 |
| Part Number | BDT60 |
| Manufacturer | Power Innovations Limited |
| Title | PNP Transistor |
| Description | BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1. |
| Features | temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -4 -0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordan. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60A |
Power Innovations Limited |
PNP Transistor |
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| 2 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60AF |
INCHANGE |
PNP Transistor |
|
| 5 | BDT60B |
Power Innovations Limited |
PNP Transistor |
|
| 6 | BDT60B |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 7 | BDT60B |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 8 | BDT60BF |
INCHANGE |
PNP Transistor |
|
| 9 | BDT60C |
Power Innovations Limited |
PNP Transistor |
|
| 10 | BDT60C |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
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Desde 2024. D4U Semiconductor.
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