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BDT60 |
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| Part Number | BDT60 |
| Manufacturer | Power Innovations Limited |
| Description | BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDT61, BDT61A, BDT6... |
| Features |
temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -4 -0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
1
BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
... |
| Document |
 BDT60 Data Sheet
PDF 168.48KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 2 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 3 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 4 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 5 | BDT60A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | BDT60AF |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
|