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BDT60B |
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| Part Number | BDT60B |
| Manufacturer | Power Innovations Limited |
| Description | BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A B C E q q q TO-220 PACKAGE (TOP VIEW) 1 2 3 Pi. |
| Features | temperature at the rate of 0.4 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. V EBO IC IB Ptot Ptot Tj Tstg TA VCEO VCBO SYMBOL VALUE -60 -80 -100 -120 -60 -80 -100 -120 -5 -4 -0.1 50 2 -65 to +150 -65 to +150 -65 to +150 V A A W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS . |
| Datasheet |
 BDT60B Data Sheet
PDF 168.48KB |
| Distributor | Stock | Price | Buy |
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BDT60B |
| Part Number | BDT60B |
| Manufacturer | New Jersey Semi-Conductor |
| Title | PNP SILICON POWER DARLINGTONS |
| Description | . |
| Features | . |
BDT60B |
| Part Number | BDT60B |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. |
| Features | CTERISTICS SYMBOL PARAMETER -65~150 MAX Rth j-c Thermal Resistance,Junction to Case 2.5 Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors BDT60/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX U. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 6 | BDT60A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDT60AF |
INCHANGE |
PNP Transistor |
|
| 8 | BDT60BF |
INCHANGE |
PNP Transistor |
|
| 9 | BDT60C |
Power Innovations Limited |
PNP Transistor |
|
| 10 | BDT60C |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
Desde 2024. D4U Semiconductor.
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