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BDT63A Silicon Darlington Power Transistor

BDT63A

BDT63A
BDT63A BDT63A
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Part Number BDT63A
Manufacturer Comset Semiconductors
Description SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT62-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbo.
Features 63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range www.DataSheet.net/ Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings BDT63 BDT63A BDT63B BDT63C BDT63 BDT63A BDT63B BDT63C Value Unit RthJ-MB From junction to mounting base 1.39 K/W RthJ-A From junction to ambient in free air 70 K/W 26/09/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BDT63-A-B-C ELECTRICAL CH.
Datasheet Datasheet BDT63A Data Sheet
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BDT63A

Inchange Semiconductor
BDT63A
Part Number BDT63A
Manufacturer Inchange Semiconductor
Title Silicon NPN Darlington Power Transistor
Description ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RAT.
Features 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 V(BR)CEO Collector-Emitter Breakdown Voltage BDT63A BDT63B IC= 30mA ;IB=0 BDT63C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage I.


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