Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BDT65 |
| Part Number | BDT65 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RAT. |
| Features | sc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT65/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT65 V(BR)CEO Collector-Emitter Breakdown Voltage BDT65A BDT65B IC= 30mA ;IB=0 BDT65C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 6 | BDT60A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDT60AF |
INCHANGE |
PNP Transistor |
|
| 8 | BDT60B |
Power Innovations Limited |
PNP Transistor |
|
| 9 | BDT60B |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 10 | BDT60B |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
|