Distributor | Stock | Price | Buy |
---|
BDT65B |
Part Number | BDT65B |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RAT. |
Features | sc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT65/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT65 V(BR)CEO Collector-Emitter Breakdown Voltage BDT65A BDT65B IC= 30mA ;IB=0 BDT65C VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BDT65 |
INCHANGE |
NPN Transistor | |
2 | BDT65 |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS | |
3 | BDT65A |
INCHANGE |
NPN Transistor | |
4 | BDT65A |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS | |
5 | BDT65AF |
INCHANGE |
NPN Transistor | |
6 | BDT65BF |
INCHANGE |
NPN Transistor | |
7 | BDT65C |
INCHANGE |
NPN Transistor | |
8 | BDT65C |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | BDT65C |
Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS | |
10 | BDT65CF |
INCHANGE |
NPN Transistor |