| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
ADV |
N-Channel MOSFET ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant 1 2 3 Description: The ADM250N04 series MOSFETs is a new technology, which |
|
|
|
|
ADV |
P-Channel MOSFET Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250uA -30 IDSS Zero Gate Voltage Drain Current VDS= |
|
|
|
|
ADV |
N-Channel MOSFET Test conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵ |
|
|
|
|
ADV |
N-Channel MOSFET r Test conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵ |
|
|
|
|
ADV |
P-Channel MOSFET Symbol Parameter Test conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current RDS(ON) Drain-SourceOn-stateResistance⑵ gFS Forwa |
|
|
|
|
ADV |
P-Channel MOSFET ● High Current Rating ● Super Low RDS(ON) ●100% EAS Guaranteed ● Advanced Trench technology ● Lead-Free,RoHS Compliant 1 1 2 2 3 3 Description: The AM160P06G series MOSFETs is a new technology, which combines an innovative super junction te |
|
|
|
|
ADV |
N-Channel MOSFET s On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵ VGS=0V, IDS=250u |
|
|
|
|
ADV |
P-Channel MOSFET Symbol Parameter Test conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current RDS(ON) Drain-SourceOn-stateResistance⑵ gFS Forwa |
|
|
|
|
ADV |
N-Channel MOSFET ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant 1 2 3 Description: The ADM200N04 series MOSFETs is a new technology, which |
|
|
|
|
ADV |
P-Channel MOSFET Symbol Parameter Test conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS Gate Threshold Voltage Gate Leakage Current RDS(ON) Drain-SourceOn-stateResistance⑵ gFS Forw |
|
|
|
|
ADV |
N-Channel MOSFET conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵ VGS=0V, |
|
|
|
|
ADV |
P-Channel MOSFET Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ VGS=0V, IDS=250uA VDS= 24V, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=VGS, IDS=250uA VGS=±20V, VDS= |
|
|
|
|
ADV |
N-Channel MOSFET ● Low gate input resistance ● High dv/dt and avalanche capabilities ●100% avalanche tested ● Low input capacitance and gate charge ● Lead-Free,RoHS Compliant 1 2 3 Description: The ADM20N60F series MOSFETs is a new technology, which combines an |
|
|
|
|
ADV |
N-Channel MOSFET ff Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵ VGS=0V, IDS=250uA VDS= |
|
|
|
|
ADV |
N-Channel MOSFET Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵ VGS=0V, IDS=250uA VDS= 48 |
|
|
|
|
ADV |
N-Channel MOSFET DSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ VGS=0V, IDS=250uA VDS= 60V, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=VGS, IDS=250uA VGS=±20V, VDS=0V VGS= 10V, IDS=3A |
|
|
|
|
ADV |
P-Channel MOSFET Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250uA -30 IDSS Zero Gate Voltage Drain Current VDS |
|
|
|
|
ADV |
N-Channel MOSFET conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) gFS Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵ VGS=0V, |
|
|
|
|
ADV |
N-Channel MOSFET ted) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250uA 60 IDSS Zero Gate Voltage Drain Current VDS= 48V, VGS=0V -- VDS=40V, VGS=0V TJ=55°C -- VGS(th) Gat |
|
|
|
|
ADV |
N-Channel MOSFET ed) Symbol Parameter Test conditions Min. Typ. Max. Unit On/off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250uA 60 IDSS Zero Gate Voltage Drain Current VDS= 48V, VGS=0V -- VDS=40V, VGS=0V TJ=55°C -- VGS(th) Gate |
|
Desde 2024. D4U Semiconductor.
|