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ADM105N03E |
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| Part Number | ADM105N03E |
| Manufacturer | ADV |
| Description | ADV ADM105N03E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V ID 105A RDS(ON) (mΩ) 4.0mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specif... |
| Features |
s
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th) IGSS RDS(ON) gFS
Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ Forward transconductance⑵
VGS=0V, IDS=250uA VDS= 24V, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=VGS, IDS=250uA VGS=±20V, VDS=0V VGS= 10V, IDS=30A VDS= 10V, IDS=30A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V, VDS= 15V, Frequency=1.0MHz
Switching Characteristics
td(ON)
Turn-on Delay Time⑴
tr
Turn-on Rise Time⑴
td(OFF... |
| Document |
 ADM105N03E Data Sheet
PDF 675.50KB |
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Desde 2024. D4U Semiconductor.
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