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ADM23N06E |
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| Part Number | ADM23N06E |
| Manufacturer | ADV |
| Description | ADV ADM23N06E N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 23A RDS(ON) (mΩ) 42mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ... |
| Features |
ed)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
On/off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=250uA
60
IDSS
Zero Gate Voltage Drain Current
VDS= 48V, VGS=0V
--
VDS=40V, VGS=0V TJ=55°C
--
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250uA
1
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
--
RDS(ON)
Drain-SourceOn-stateResistance⑵ VGS= 10V, IDS=12A
--
gFS
Forward transconductance⑵
VDS= 10V, IDS=10A
--
--
--
V
--
1
uA
--
10
1.5
3.0
V
-- ±250 nA
28.2
42
m
14
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Ou... |
| Document |
 ADM23N06E Data Sheet
PDF 529.92KB |
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Desde 2024. D4U Semiconductor.
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